Low−temperature irradiation effects in SiO2−insulated MIS devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321698
Reference18 articles.
1. Total Dose Effects of Ionizing Radiation on MOS Structures at 90°K
2. Radiation-induced space-charge buildup in MOS structures
3. The Effects of Electron and Hole Trapping on the Radiation Hardness of Al2O3 MIS Devices
4. MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel
5. DENSITY OF SiO2–Si INTERFACE STATES
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