Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1

Published:2011-11 Issue:9 Volume:110 Page:093513
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Laumer Bernhard,Wassner Thomas A.,Schuster Fabian,Stutzmann Martin,Schörmann Jörg,Rohnke Marcus,Chernikov Alexej,Bornwasser Verena,Koch Martin,Chatterjee Sangam,Eickhoff Martin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3658020

Reference60 articles.

1. MgxZn1−xO as a II–VI widegap semiconductor alloy

2. Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

3. Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells

4. Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers

5. Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy

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