Order and disorder at the C-face of SiC: A hybrid surface reconstruction-Reference-Cited by-同舟云学术

Order and disorder at the C-face of SiC: A hybrid surface reconstruction

Published:2020-04-06 Issue:14 Volume:116 Page:141605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Machado-Charry Eduardo¹^ORCID,González César²^ORCID,Dappe Yannick J.³^ORCID,Magaud Laurence⁴^ORCID,Mousseau Normand⁵^ORCID,Pochet Pascal⁶^ORCID

Affiliation:

1. Institute of Solid State Physics and NAWI Graz, Graz University of Technology, Petersgasse 16, 8010 Graz, Austria

2. Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center, Facultad de Ciencias, Universidad Autónoma de Madrid, E-28049 Madrid, Spain

3. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France

4. Univ. Grenoble Alpes, CNRS, Institut Neel, F-38042 Grenoble, France

5. Département de physique and RQMP, Université de Montréal, Case Postale 6128, Succursale Centre-ville, Montréal, Québec H3C 3J7, Canada

6. Department of Physics, IriG, Univ. Grenoble Alpes and CEA, F-38000 Grenoble, France

Funder

Governement of Spain

Maria de Maeztu

Natural Sciences and Engineering Research Council of Canada

Nanoscience Fundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5143010

Reference21 articles.

1. Theory of semiconductor surface reconstruction

2. Review of 2D superconductivity: the ultimate case of epitaxial monolayers

3. Morphology and atomic structure of the surface reconstruction

4. Atomic structures of 6HSiC (0001) and (0001̄) surfaces

5. Structure and stability of the interface between graphene and 6H-SiC(0 0 0 −1) (3 × 3): an STM andab initiostudy

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