Oxygen migration in epitaxial CoFe/MgO/Co2MnSi magnetic tunnel junctions
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
2. Materials Science Department, University of California, Santa Barbara, California 93106, USA
Funder
Semiconductor Research Corporation (SRC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5003089
Reference34 articles.
1. The emergence of spin electronics in data storage
2. Effect of nitrogen incorporation to oxidation process on the reliability of magnetic tunnel junctions
3. Spin-polarization and electronic properties of half-metallic Heusler alloys calculated from first principles
4. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
5. Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
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