Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106658
Reference16 articles.
1. Emerging technology for in situ processing: Patterning alternatives
2. Maskless etching of GaAs and InP using a scanning microplasma
3. Dot lithography for zero‐dimensional quantum wells using focused ion beams
4. Insitupattern formation and high quality overgrowth by gas source molecular beam epitaxy
5. Vacuum lithography forinsitufabrication of buried semiconductor microstructures
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1. Microphotoluminescence of single disks comprising buried quantum wells fabricated byin situelectron-beam lithography;Applied Physics Letters;1997-03-17
2. Selective area chemical beam epitaxy of GaAs using Ga2O3 as a mask layer;Journal of Crystal Growth;1996-11
3. Fabrication of Quantum Wire and Minute Buried Heterostructure by In Situ Etching and Selective MOCVD Growth;Japanese Journal of Applied Physics;1996-02-28
4. Fabrication of free-standing microtransducers in GaAs with an electron-beam-induced oxide mask and Cl2 etching;Sensors and Actuators A: Physical;1995-08
5. In situ etching and regrowth process for edge- and surface-emitting laser diodes with an AlGaAs/GaAs buried heterostructure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-07
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