A study of GaAs/AlGaAs p-type quantum well infrared photodetectors with different barrier heights
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366644
Reference16 articles.
1. Quantum‐well infrared photodetectors
2. 9-μm cutoff 256×256 GaAs/Al/sub x/Ga/sub 1-x/As quantum well infrared photodetector hand-held camera
3. Contact and distributed effects in quantum well infrared photodetectors
4. A self‐consistent model for quantum well infrared photodetectors
5. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
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3. Near-infrared imaging with quantum-dot-sensitized organic photodiodes;Nature Photonics;2009-05-17
4. Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE;2007 International Workshop on Physics of Semiconductor Devices;2007-12
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