Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence-Reference-Cited by-同舟云学术

Defect analysis in GaN films of HEMT structure by cross-sectional cathodoluminescence

Published:2017-06-21 Issue:23 Volume:121 Page:235703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Isobe Yasuhiro,Hung Hung,Oasa Kohei,Ono Tasuku,Onizawa Takashi,Yoshioka Akira,Takada Yoshiharu,Saito Yasunobu,Sugiyama Naoharu,Tsuda Kunio^ORCID,Sugiyama Toru,Mizushima Ichiro

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986497

Reference39 articles.

1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

4. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

5. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

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