Bimodal roughness of heterointerface in quantum wells analyzed by photoluminescence excitation spectroscopy-Reference-Cited by-同舟云学术

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Bimodal roughness of heterointerface in quantum wells analyzed by photoluminescence excitation spectroscopy

Published:1995-01-16 Issue:3 Volume:66 Page:338-340
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Woo J. C.,Rhee S. J.,Kim Y. M.,Ko H. S.,Kim W. S.,Kim D. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114205

Reference10 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Linear polarization of radiation from ZnCdSe/ZnSe quantum wells induced by the anisotropic profile of interfaces;Journal of Experimental and Theoretical Physics Letters;2006-06

2. Influence of interface growth steps on the anisotropy of excitonic emission in ZnCdSe/ZnSe quantum wells;Semiconductors;2006-04

3. Level-statistics in the resonant Rayleigh scattering dynamics of monolayer-split excitons;physica status solidi (b);2003-08

4. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells;Physical Review B;2000-04-15

5. Photoluminescence spectroscopy on excitonic states of narrow GaAs–AlGaAs single quantum wells in high magnetic field;Superlattices and Microstructures;1998-10

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