Computer modeling of carrier transport in (Hg,Cd)Te photodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337014
Reference13 articles.
1. Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTe
2. Unified model of fundamental limitations on the performance of silicon solar cells
3. A comparison of the dominant Auger transitions in p-type (Hg,Cd)Te
4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
5. Tunnel current limitations of narrow bandgap infrared charge coupled devices∗
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2. Exploring novel methods to achieve sensitivity limits for high operating temperature infrared detectors;Infrared Physics & Technology;2013-11
3. Numerical investigation of Auger contributed performance loss in long wavelength infrared HgCdTe photodiodes;Solid-State Electronics;2013-09
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