Electrical Properties of Silicon Films Grown Epitaxially on Sapphire
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1709782
Reference23 articles.
1. Single‐Crystal Silicon on a Sapphire Substrate
2. Single‐Crystal Silicon on a Sapphire Substrate
3. Grown-film silicon transistors on sapphire
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1. NANO POWDER SYNTHESIS BY PLASMASReport of the Session held at the International Round Table on Thermal Plasma Fundamentals and ApplicationsHeld in Sharm el Sheikh Egypt - Jan. 14-18 2007;High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes);2008
2. Fabrication of heteroepitaxial Si films on sapphire substrates using mesoplasma CVD;Surface and Coatings Technology;2007-02
3. SUPER HIGH RATE DEPOSITION OF HOMO- AND HETERO-EPITAXIAL SILICON THICK FILMS BY MESO-PLASMA CVD;High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes);2007
4. References;Thin Films by Chemical Vapour Deposition;1990
5. Thin heteroepitaxial Si‐on‐sapphire films grown at 600 °C by reactive ion beam deposition;Journal of Applied Physics;1988-11
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