Carrier transfer from InAs quantum dots to ErAs metal nanoparticles
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA
2. AFRL/RXAN, Wright Patterson AFB, Ohio 45433, USA
Funder
National Science Foundation (NSF)
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4895519
Reference19 articles.
1. Controlling electronic properties of epitaxial nanocomposites of dissimilar materials
2. Continuous wave terahertz radiation from an InAs/GaAs quantum-dot photomixer device
3. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials
4. Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs∕InGaAlAs superlattices
5. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction
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1. Total energy calculation for the metallic hcp phase of Zn in the bulk, layered, and quantum dot limits;Condensed Matter Physics;2020-09
2. Kinetically controlled dewetting of thin GaAs cap from an ErAs/GaAs nanoparticle composite layer;Journal of Vacuum Science & Technology B;2018-07
3. Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05
4. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures;Journal of Crystal Growth;2015-09
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