The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4879253
Reference37 articles.
1. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
2. GaN:Eu electroluminescent devices grown by interrupted growth epitaxy
3. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
4. Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy
5. Optical and magnetic properties of Eu-doped GaN
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1. Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu;Journal of Luminescence;2024-06
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3. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10
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