Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures-Reference-Cited by-同舟云学术

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Stark shift and field ionization of arsenic donors in 28Si-silicon-on-insulator structures

Published:2014-05-12 Issue:19 Volume:104 Page:193502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lo C. C.,Simmons S.,Lo Nardo R.,Weis C. D.,Tyryshkin A. M.,Meijer J.,Rogalla D.,Lyon S. A.,Bokor J.,Schenkel T.,Morton J. J. L.

Funder

DOE

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4876175

Reference21 articles.

1. A silicon-based nuclear spin quantum computer

2. Microwave Spin Echoes from Donor Electrons in Silicon

3. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

4. Orbach Spin-Lattice Relaxation of Shallow Donors in Silicon

5. Electron spin coherence exceeding seconds in high-purity silicon

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3. Donor-based qubits for quantum computing in silicon;Applied Physics Reviews;2021-09

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