Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates-Reference-Cited by-同舟云学术

Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates

Published:2017-03-07 Issue:9 Volume:121 Page:094302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lee Choong Hee¹^ORCID,Krishnamoorthy Sriram¹^ORCID,O'Hara Dante J.²,Brenner Mark R.¹,Johnson Jared M.³,Jamison John S.³,Myers Roberto C.³^ORCID,Kawakami Roland K.²⁴,Hwang Jinwoo³,Rajan Siddharth¹

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Program of Materials Science and Engineering, University of California, Riverside, California 92521, USA

3. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

4. Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Division of Materials Research (DMR)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4977697

Reference46 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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