Mediation of strain from In0.36Ga0.64As layers through GaAs barriers in multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112425
Reference13 articles.
1. Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity
2. Interface morphology in molecular beam epitaxy grown In0.5Ga0.5As/GaAs strained heterostructures
3. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
4. Relaxation of strained InGaAs during molecular beam epitaxy
5. Critical layer thickness of In0.82Ga0.18As/InP quantum wells
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3. GaInNAs p–i–n Photodetectors with Multiquantum Wells Structure;Japanese Journal of Applied Physics;2008-04-25
4. Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells;Journal of Applied Physics;1997-11-15
5. Electrical characterization of partially relaxed InxGa1−xAs/GaAs multiple quantum well structures;Applied Physics Letters;1997-06-16
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