Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Frequency driven inversion of tunnel magnetoimpedance and observation of positive tunnel magnetocapacitance in magnetic tunnel junctions

Published:2016-08 Issue:5 Volume:109 Page:052401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Parui Subir¹,Ribeiro Mário¹,Atxabal Ainhoa¹,Bedoya-Pinto Amilcar¹²,Sun Xiangnan¹³,Llopis Roger¹,Casanova Fèlix¹⁴,Hueso Luis E.¹⁴^ORCID

Affiliation:

1. CIC nanoGUNE, 20018 Donostia-San Sebastian, Spain

2. Max Planck Institute of Microstructure Physics, D-06120 Halle, Germany

3. National Center for Nanoscience and Technology, 100190 Beijing, People's Republic of China

4. IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain

Funder

European Research Council (ERC)

Ministerio de Economía y Competitividad (MINECO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4960202

Reference33 articles.

1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

2. Magnetically engineered spintronic sensors and memory

3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

4. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

5. Spintronics: A Spin-Based Electronics Vision for the Future

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1. Magnetization dynamics driven by displacement currents across a magnetic tunnel junction;Physical Review Applied;2024-08-07

2. Large magnetocapacitance of up to 456% at room temperature in FeCo/MgAl₂O₄/FeCo(001) magnetic tunnel junctions;Applied Physics Express;2023-11-01

3. Large magnetocapacitance beyond 420% in epitaxial magnetic tunnel junctions with an MgAl2O4 barrier;Scientific Reports;2022-05-16

4. Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions;Scientific Reports;2021-07-12

5. Sign inversion phenomenon of voltage-induced tunnel magnetocapacitance;Applied Physics Letters;2021-05-03

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