Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510970
Reference13 articles.
1. Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline silicon
2. Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
3. Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
4. Efficient Blue Light Emission from Silicon: The First Integrated Si-Based Optocoupler
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1. Ion-Beam Synthesis of the Crystalline Ge Phase in SiO x N y Films upon Annealing under High Pressure;Semiconductors;2018-02
2. Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure;Semiconductors;2017-10
3. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films;Semiconductors;2017-09
4. Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing;Solid State Communications;2016-12
5. An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses;Semiconductors;2015-09
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