Abnormal staircase-like I-V curve in InGaN quantum well solar cells
Author:
Affiliation:
1. Department of Physics, Jimei University, Xiamen 361021, Fujian, People's Republic of China
2. Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005, Fujian, People's Republic of China
Funder
the National Natural Science Founation of China
the National Natural Science Foundation of China
the Training Program for Distinguished Young Scholars in Fujian Province Uiversity
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5018481
Reference28 articles.
1. Theoretical possibilities of InxGa1−xN tandem PV structures
2. When group-III nitrides go infrared: New properties and perspectives
3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
4. Calculation of the maximum attainable efficiency of a single heterojunction solar cell
5. Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
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