Measurement of elastic relaxation in cross‐sectional transmission electron microscopy of GexSi1−x/Si strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107925
Reference12 articles.
1. Structure imaging of commensurate GexSi1−x/Si(100) interfaces and superlattices
2. Effect of layer size on lattice distortion in strained‐layer superlattices
3. Novel strain-induced defect in thin molecular-beam epitaxy layers
4. Transmission electron microscopy of short‐period Si/Ge strained‐layer superlattices on Ge substrates
5. CBED and CBIM from semiconductors and superconductors
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1. Theoretical expression for elastic relaxation in strained-layer superlattice specimens thinned for transmission electron microscopy;Applied Physics Letters;2005-09-19
2. Transmission electron microscopy analysis of the shape and size of semiconductor quantum dots;Philosophical Magazine Letters;1999-04
3. Applications of microdiffraction related to HREM;Microscopy Research and Technique;1998-01-15
4. Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy;Journal of Applied Physics;1997-08-15
5. Stress relaxation in highly strained InAs/GaAs structures as studied by finite element analysis and transmission electron microscopy;Journal of Applied Physics;1996-09
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