Uniaxial-stress effects on electronic properties of silicon carbide nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2221388
Reference20 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. Synthesis and characterization of carbide nanorods
3. Oriented Silicon Carbide Nanowires: Synthesis and Field Emission Properties
4. Large-scale synthesis of crystalline ?-SiC nanowires
5. Nanobeam Mechanics: Elasticity, Strength, and Toughness of Nanorods and Nanotubes
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