Electron emission from GaN n–p junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1514824
Reference9 articles.
1. Electron Emission from Avalanche Breakdown in Silicon
2. Electron Emission from Breakdown Regions in SiCp−nJunctions
3. Negative electron affinity based vacuum collector transistor
4. Photoemission from GaN
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1. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes;Journal of Applied Physics;2018-08-07
2. Diffusion-Driven Charge Transport in Light Emitting Devices;Materials;2017-12-12
3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop;Physical Review Letters;2013-04-25
4. Electronic field-assisted emission from GaN: the role of surface charges;Semiconductor Science and Technology;2005-01-06
5. Modeling of electronic transport in GaN n-i-p junctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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