Revealing silicon crystal defects by conductive atomic force microscope-Reference-Cited by-同舟云学术

Revealing silicon crystal defects by conductive atomic force microscope

Published:2018-09-03 Issue:10 Volume:113 Page:101601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Xiaoxiao¹,Yu Bingjun¹^ORCID,Zou Yijia¹,Zhou Chao¹,Li Xiaoying²,Wu Jiang³,Liu Huiyun³,Chen Lei¹,Qian Linmao¹

Affiliation:

1. Tribology Research Institute, Key Laboratory of Advanced Technologies of Materials (Ministry of Education), Southwest Jiaotong University, Chengdu 610031, Sichuan Province, People's Republic of China

2. School of Metallurgy and Materials, The University of Birmingham, Birmingham B15 2TT, United Kingdom

3. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5044518

Reference28 articles.

1. Giant Piezoelectricity on Si for Hyperactive MEMS

2. Silicon nanostructures for photonics and photovoltaics

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4. Crystallographic effect on subsurface damage formation in silicon microcutting

5. Nanometric cutting of single crystal silicon surfaces modified by ion implantation

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