The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790296
Reference25 articles.
1. Antimonide-based compound semiconductors for electronic devices: A review
2. Strain relief mechanisms and the nature of dislocations in GaAs/Si heterostructures
3. Atomic core structure of Lomer dislocation at GaAs/(001)Si interface
4. Structure of 60° dislocations at the GaAs/Si interface
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