Impurity‐induced‐disordered phase modulators in AlGaAs/GaAs quantum well and double‐heterostructure waveguides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99816
Reference13 articles.
1. Stripe‐geometry AlGaAs‐GaAs quantum‐well heterostructure lasers defined by impurity‐induced layer disordering
2. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering
3. Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering
4. Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method;Applied Physics Letters;1994-01-31
2. Impurity-induced disorder in strained InGaAs/GaAs quantum wells by Zn diffusion and thermal annealing;Semiconductor Science and Technology;1992-06-01
3. Narrow bandwidth electrooptic polarization modulator using GaAs quantum-well waveguides;IEEE Photonics Technology Letters;1991-04
4. S‐bend loss in disorder‐delineated GaAs heterostructure laser waveguides with native and blue shifted active regions;Applied Physics Letters;1990-08-20
5. Phase modulation in GaAs/AlGaAs double heterostructures. II. Experiment;Journal of Applied Physics;1990-06
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