Schottky barrier height tuning of silicide on Si1−xCx
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2820386
Reference18 articles.
1. Integration of PtSi-Based Schottky-Barrier p-MOSFETs With a Midgap Tungsten Gate
2. Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode
3. K. Maex and M. V. Rossum,Properties of Metal Silicides(IEE-INSPEC, London, 1995), p. 166.
4. A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor
5. N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide
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1. Ni silicide formation on epitaxial Si1−yCy/(001) layers;Thin Solid Films;2010-10
2. Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-01
3. C Redistribution during Ni Silicide Formation on Si[sub 1−y]C[sub y] Epitaxial Layers;Journal of The Electrochemical Society;2010
4. Schottky Barrier Height of Nickel Silicide Contacts Formed on $\hbox{Si}_{1 - x}\hbox{C}_{x}$ Epitaxial Layers;IEEE Electron Device Letters;2009-12
5. The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors;IEEE Transactions on Electron Devices;2009-11
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