Electronic structure and optoelectronic properties of strained InAsSb∕GaSb multiple quantum wells-Reference-Cited by-同舟云学术

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Electronic structure and optoelectronic properties of strained InAsSb∕GaSb multiple quantum wells

Published:2005-10-31 Issue:18 Volume:87 Page:181911
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Koprucki Thomas,Baro Michael,Bandelow Uwe,Tien Tran Q.,Weik Fritz,Tomm Jens W.,Grau Markus,Amann Markus-Christian

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2125126

Reference11 articles.

1. Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm

2. Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm

3. Materials and structural design of a mid-infrared light-emitting device

4. k⋅ptheory of energy bands, wave functions, and optical selection rules in strained tetrahedral semiconductors

5. Spectral properties of k p schrödinger operators in one space dimension

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Choosing a basis that eliminates spurious solutions ink∙ptheory;Physical Review B;2007-06-28

2. Electronic States in Semiconductor Nanostructures and Upscaling to Semi-Classical Models;Analysis, Modeling and Simulation of Multiscale Problems

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