The growth of interfacial passive layers under thermal passivation of integrated Pb(Zr,Ti)O3 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2795572
Reference20 articles.
1. A Highly Reliable 3-D Integrated SBT Ferroelectric Capacitor Enabling FeRAM Scaling
2. Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors
3. Ferroelectric Random Access Memories
4. Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films
5. Delamination behavior of Pt in a SiO2/Pt/Pb(ZrxTi1−x)O3/Pt ferroelectric thin-film capacitor
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1. Ferroelectric polarization and defect-dipole switching in an epitaxial (111) BiFeO3 thin film;Journal of Applied Physics;2015-05-28
2. Temperature dependence of polarization switching properties of Bi3.15Nd0.85Ti3O12ferroelectric thin film;Journal of Applied Physics;2011-07
3. Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 ns to 1 s;Japanese Journal of Applied Physics;2010-06-21
4. Measurement of Nonlinear Current–Voltage Dependence of Interfacial Passive Layers for Ferroelectric Thin Films;Japanese Journal of Applied Physics;2010-04-20
5. Effect of manganese doping on the size effect of lead zirconate titanate thin films and the extrinsic nature of ‘dead layers’;Journal of Physics: Condensed Matter;2010-01-15
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