Dielectric functions of AlxGa1−xSb (0.00⩽x⩽0.39) alloys from 1.5to6.0eV
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2134890
Reference36 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
2. Normal incidence infrared modulator using direct–indirect transitions in GaSb quantum wells
3. Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy system
4. Direct- and indirect-energy-gap dependence on Al concentration inAlxGa1−xSb(x<~0.41)
5. Thermoreflectance study of the direct optical gap in epitaxialAlxGa1−xSb(x<~0.5)
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1. First principles calculation of the structural, electronic, optical and elastic properties of the cubic Al Ga1-Sb ternary alloy;Optical Materials;2021-03
2. Refractive indices of MBE-grown AlxGa(1−x)As ternary alloys in the transparent wavelength region;AIP Advances;2021-02-01
3. Ellipsometric studies of AlxGa1−xAs0.5Sb0.5 (0.0 ≤ x ≤ 0.6) alloys lattice-matched to InP(100);Journal of Applied Physics;2014-01-14
4. Raman scattering by phonons of Ga1−xAlxSb mixed crystals;Journal of Physics and Chemistry of Solids;2013-06
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