Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1086, USA
Funder
Laboratory Directed Research and Development (LDRD)
Sandia National Laboratories
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4939305
Reference21 articles.
1. Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
2. Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition
3. Origin of forward leakage current in GaN-based light-emitting devices
4. Investigation of leakage current paths in n-GaN by conductive atomic force microscopy
5. Direct observation of localized high current densities in GaN films
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase;Japanese Journal of Applied Physics;2021-03-01
2. Degradation and failure mechanism of AlGaN-based UVC-LEDs;Solid-State Electronics;2019-06
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