Ellipsometric and Rutherford backscattering characterization of low‐energy hydrogen‐, helium‐, neon‐, and argon‐bombarded silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340392
Reference18 articles.
1. Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion‐beam etching
2. Silicon Damage Caused by Hydrogen Containing Plasmas
3. MOSC-tEvaluation of Reactive Ion Etched Silicon Substrate
4. Optical Model for the Ellipsometric Characterization of Low Energy Ion Beam Damage in Single‐Crystal Silicon
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