Observation of iron pileup and reduction of SiO2at the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99802
Reference10 articles.
1. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
2. Observation of phosphorus pile‐up at the SiO2‐Si interface
3. Mechanism of phosphorus pile‐up in the Si‐SiO2interface
4. EPR of a thermally induced defect in silicon
5. Iron as a thermal defect in silicon
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