Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4-Reference-Cited by-同舟云学术

Light harvesting with Ge quantum dots embedded in SiO2 or Si3N4

Published:2014-01-28 Issue:4 Volume:115 Page:043103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cosentino Salvatore,Sungur Ozen Emel,Raciti Rosario,Mio Antonio M.,Nicotra Giuseppe,Simone Francesca,Crupi Isodiana,Turan Rasit,Terrasi Antonio,Aydinli Atilla,Mirabella Salvo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4863124

Reference35 articles.

1. Optical gain in silicon nanocrystals

2. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

3. High-efficiency silicon-compatible photodetectors based on Ge quantum dots

4. Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

5. Silicon quantum dot nanostructures for tandem photovoltaic cells

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1. Structural and optical properties of Cu implanted Ge thin films;Physica B: Condensed Matter;2024-02

2. Near infrared photo-response of as-deposited films based on GeSn nanoparticles in Si₃N₄ dielectric;2023 International Semiconductor Conference (CAS);2023-10-11

3. Novel semi‐transparent solar cell based on ultrathin multiple Si/Ge quantum wells;Progress in Photovoltaics: Research and Applications;2022-12-28

4. Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering;MRS Advances;2022-11-09

5. Size- and position-controlled Ge nanocrystals separated by high-k dielectrics;MRS Bulletin;2022-05-12