Cathodoluminescence study of domains, defects, and interdiffusion in ZnSe/GaAs(100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356551
Reference15 articles.
1. Optical Properties of ZnSe Epilayers and Films
2. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system
3. Growth mode and dislocation distribution in the ZnSe/GaAs (100) system
4. Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers
5. Optical transitions in ultra-high-purity zinc selenide
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5. Development of Cathodoluminescence (CL) for Semiconductor Research, Part I: TEM-CL Study of Microstructures and Defects in Semiconductor Epilayers;Nanoscale Spectroscopy and Its Applications to Semiconductor Research;2002
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