Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342640
Reference10 articles.
1. Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets
2. X‐point excitons in AlAs/GaAs superlattices
3. Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structures
4. Superconducting Sn/Sn‐oxide/Sn tunneling junctions as high‐resolution x‐ray detectors
5. Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices
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