InAs/InP quantum dot VECSEL emitting at 1.5 μm-Reference-Cited by-同舟云学术

InAs/InP quantum dot VECSEL emitting at 1.5 μm

Published:2019-10-21 Issue:17 Volume:115 Page:171105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nechay K.¹^ORCID,Mereuta A.²,Paranthoen C.³^ORCID,Brévalle G.³,Levallois C.³,Alouini M.³,Chevalier N.³,Perrin M.³,Suruceanu G.⁴,Caliman A.⁴,Guina M.¹,Kapon E.²

Affiliation:

1. Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere 33720, Finland

2. École Polytechnique Fédérale de Lausanne, Laboratory of Physics of Nanostructures, Institute of Physics, 1015 Lausanne, Switzerland

3. Univ Rennes, CNRS, Institut FOTON - UMR 6082, F-35000 Rennes, France

4. LakeDiamond SA, Rue Galilée 7, 1400 Yverdon-les-Bains, Switzerland

Funder

Suiss National Science Foundation

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5125632

Reference25 articles.

1. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

2. Semiconductor disk lasers for the generation of visible and ultraviolet radiation

3. Optically pumped VECSELs: review of technology and progress

4. Recent advances in ultrafast semiconductor disk lasers

5. M. Butkus , J. Rautiainen , O. G. Okhotnikov , S. S. Mikhrin , I. L. Krestnikov , and E. U. Rafailov , in Proceedings of the 22nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto, Japan, September, 2010, pp. 71–72.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Advances in Light Detection and Ranging: Optical Modulation Solutions and Novel Nanotechnologies;Advanced Quantum Technologies;2023-11-27

2. Optically enhanced single- and multi-stacked 1.55 μm InAs/InAlGaAs/InP quantum dots for laser applications;Journal of Physics D: Applied Physics;2023-04-27

3. Experimental investigation of stripe cavity length effect on threshold current density for InP/AlGaInP QD laser diode;Optical Materials;2022-05

4. Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition;Journal of Crystal Growth;2022-01

5. Investigation of Peculiarities of Coherent Magnetotransport of InN Nanowires Using Scanning Gate Microscopy;Journal of Experimental and Theoretical Physics;2022-01