Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
2. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Funder
CRCG Small Project Funding
University Development Fund of HKU
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4929428
Reference22 articles.
1. Complete Guide to Semiconductor Devices
2. Physics of Semiconductor Devices
3. Hydrogen sensitivity of palladium–thin-oxide–silicon Schottky barriers
4. Hydrogen sensors – A review
5. Metal-semiconductor contacts
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