Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf0.5Zr0.5O2

Abstract

Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of Hf0.5Zr0.5O2 thin-films. Modest (∼2−77 pJ/cm2) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group Pca21), resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, post-synthesis, and low-entry method to modify phase in HfO2-based materials.