Identification of germanium and tin donors in InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94966
Reference11 articles.
1. Identification of donors in vapor grown indium phosphide
2. The growth of dislocation-free Ge-DOPED InP
3. Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide
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1. Magnetospectroscopy to 30T of donor states in InP;Physica B: Condensed Matter;2006-04
2. Magnetopolaron interactions inn-type indium phosphide;Physical Review B;2005-12-28
3. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping;Materials Science and Engineering: B;2001-03
4. Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates;Journal of Physics and Chemistry of Solids;2001-03
5. Far-infrared spectroscopy of the zinc acceptor in indium phosphide;Physica B: Condensed Matter;2001-01
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