Ion-gated transistors based on porous and compact TiO2 films: Effect of Li ions in the gating medium-Reference-Cited by-同舟云学术

Ion-gated transistors based on porous and compact TiO2 films: Effect of Li ions in the gating medium

Published:2020-06-01 Issue:6 Volume:10 Page:065314
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Subramanian Arunprabaharan¹^ORCID,George Ben¹^ORCID,Bobbara Sanyasi Rao¹^ORCID,Valitova Irina¹^ORCID,Ruggeri Irene¹²^ORCID,Borghi Francesca³^ORCID,Podestà Alessandro³^ORCID,Milani Paolo³^ORCID,Soavi Francesca²^ORCID,Santato Clara⁴^ORCID,Cicoira Fabio¹^ORCID

Affiliation:

1. Department of Chemical Engineering, Polytechnique Montréal, Montréal, Quebec H3T 1J4, Canada

2. Dipartimento di Chimica “Giacomo Ciamician”, Università di Bologna, Via Selmi 2, Bologna 40126, Italy

3. CIMaINa and Dipartimento di Fisica “Aldo Pontremoli”, Università degli Studi di Milano, Via Celoria 16, Milano 20133, Italy

4. Department of Engineering Physics, Polytechnique Montréal, Montréal, Quebec H3T 1J4, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

CMC Microsystems

Fonds de Recherche du Québec – Nature et Technologies

Università di Bologna

Ministère de l’Économie, de la Science et de l’Innovation – Québec

Publisher