Combinatorial study of Ni–Ti–Pt ternary metal gate electrodes on HfO2 for the advanced gate stack-Reference-Cited by-同舟云学术

Combinatorial study of Ni–Ti–Pt ternary metal gate electrodes on HfO2 for the advanced gate stack

Published:2006-10-02 Issue:14 Volume:89 Page:142108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chang K.-S.,Green M. L.,Suehle J.,Vogel E. M.,Xiong H.,Hattrick-Simpers J.,Takeuchi I.,Famodu O.,Ohmori K.,Ahmet P.,Chikyow T.,Majhi P.,Lee B.-H.,Gardner M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2357011

Reference19 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

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4. Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

5. Organic thin film transistors

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