Origin of the broad three-terminal Hanle signals in Fe/SiO2/Si tunnel junctions-Reference-Cited by-同舟云学术

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Origin of the broad three-terminal Hanle signals in Fe/SiO2/Si tunnel junctions

Published:2015-07-20 Issue:3 Volume:107 Page:032407
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sato Shoichi¹,Nakane Ryosho¹²,Tanaka Masaaki¹

Affiliation:

1. Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

2. Institute for Innovation in International Engineering Education, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926969

Reference29 articles.

1. Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface

2. Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor

3. Electrical creation of spin polarization in silicon at room temperature

4. Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

5. Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts

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2. Spin injection, relaxation, and manipulation in GaN-based semiconductors;Advances in Physics: X;2023-01-12

3. Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices;Physical Review B;2021-01-26

4. Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+−Si source/drain regions;Physical Review B;2020-07-15

5. Proximity exchange coupling in a Fe/MgO/Si tunnel contact detected by the inverted Hanle effect;Physical Review B;2019-11-26

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