Lateral extent of oxidation‐enhanced diffusion of phosphorus in 〈100〉 silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95829
Reference6 articles.
1. Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
2. The lateral effect of oxidation on boron diffusion in 〈100〉 silicon
3. The Range of Diffusion Enhancement of B and P in Si during Thermal Oxidation
4. On an analytical solution for two-dimensional diffusion of silicon self-interstitials during oxidation of silicon
5. A two-dimensional model for the excess interstitial distribution in silicon during thermal oxidation
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1. Charged point defects in semiconductors;Materials Science and Engineering: R: Reports;2006-12
2. Diffusion of gold in silicon during rapid thermal annealing: Effectiveness of the surface as a sink for self-interstitials;Journal of Applied Physics;1998-02
3. Consistent quantitative model for the spatial extent of point defect interactions in silicon;Journal of Applied Physics;1995-11
4. Decrease of the lateral distribution of interstitials in Silicon-On-Insulator structures;Microelectronic Engineering;1995-06
5. Investigation of the distribution of silicon interstitials in silicon and silicon‐on‐insulator structures after thermal oxidation;Applied Physics Letters;1995-02-20
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