Light Emission Associated with Growth Defects from Reverse‐Biased GaP p‐n Junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707819
Reference8 articles.
1. Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect Junctions
2. SOLUTE STRIATIONS IN CZOCHRALSKI‐GROWN SILICON CRYSTALS: EFFECT OF CRYSTAL ROTATION AND GROWTH RATES
3. The Preparation and Floating Zone Processing of Gallium Phosphide
4. Radiative Recombination between Deep‐Donor‐Acceptor Pairs in GaP
5. Structural Defects in GaP Crystals and Their Electrical and Optical Effects
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1. Current Density Filaments in Semiconductor Devices;Nonlinear Dynamics in Solids;1992
2. Noise in luminescent GaAs0·60P0·40 diodes under non-uniform avalanche conditions—II;Solid-State Electronics;1975-07
3. Deep hole traps in n‐type liquid encapsulated Czochralski GaP;Journal of Applied Physics;1972-11
4. Avalanche Breakdown in GaP;Journal of Applied Physics;1969-07
5. Differential negative resistance in electroluminescent GaP crystals;Lettere al Nuovo Cimento;1969-05
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