Effects of doping variations on electron transport in GaAsn+‐n‐n+structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351920
Reference19 articles.
1. Monte Carlo evaluation of electron transport in heterojunction bipolar transistor base structures
2. A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure
3. Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures
4. Transient Monte Carlo analysis and application to heterojunction bipolar transistor switching
5. Does velocity overshoot reduce collector delay time in AlGaAs/GaAs HBTs?
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A model hyperfrequency differential‐mobility for nonlinear transport in semiconductors;Journal of Applied Physics;1995-01-15
2. Linear and nonlinear analysis of microwave power generation in submicrometern+nn+InP diodes;Journal of Applied Physics;1994-11
3. One-dimensional Monte Carlo analysis of electron transport in submicrometre silicon structures;Semiconductor Science and Technology;1994-07-01
4. Response-function analysis ofn+-n-n+diode generators;Physical Review B;1994-05-15
5. Impedance field and microwave power generation in InP diodes;Physica Scripta;1994-01-01
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