Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD
Author:
Affiliation:
1. Fraunhofer IPMS, Königsbrücker Str. 178, 01099 Dresden, Germany
Funder
Electronic Components and Systems for European Leadership
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5129318
Reference19 articles.
1. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
2. J. Müller , T. S. Böscke , S. Müller , E. Yurchuk , P. Polakowski , J. Paul , D. Martin , T. Schenk , K. Khullar , A. Kersch , W. Weinreich , S. Riedel , K. Seidel , A. Kumar , T. M. Arruda , S. V. Kalinin , T. Schlosser , R. Boschke , R. van Bentum , U. Schröder , and T. Mikolajick , in IEDM (2013), pp. 10.8.1–10.8.4.
3. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
4. Ferroelectricity in hafnium oxide thin films
5. Ferroelectricity in undoped hafnium oxide
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