Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)-Reference-Cited by-同舟云学术

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Molecular-beam epitaxy of the half-Heusler alloy NiMnSb on (In,Ga)As/InP (001)

Published:2003-07-21 Issue:3 Volume:83 Page:521-523
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bach P.,Bader A. S.,Rüster C.,Gould C.,Becker C. R.,Schmidt G.,Molenkamp L. W.,Weigand W.,Kumpf C.,Umbach E.,Urban R.,Woltersdorf G.,Heinrich B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1594286

Reference12 articles.

1. Injection and detection of a spin-polarized current in a light-emitting diode

2. Electrical spin injection in a ferromagnetic semiconductor heterostructure

3. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

4. New Class of Materials: Half-Metallic Ferromagnets

5. Positron-annihilation study of the half-metallic ferromagnet NiMnSb: Theory

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4. Magneto-transport properties of cubic NiMnAs film epitaxied on GaAs (110) substrate;Journal of Physics: Condensed Matter;2021-06-14

5. Tetragonal and uniaxial strains in pristine and doped half-Heusler AuMnSn alloy;Journal of Alloys and Compounds;2020-12

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