Is intrinsic bistability really intrinsic tristability?
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101145
Reference15 articles.
1. Observation of intrinsic bistability in resonant tunneling structures
2. Comment on ‘‘Observation of intrinsic bistability in resonant-tunneling structures’’
3. Goldman, Tsui, and Cunningham reply
4. Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
5. Hysteresis predicted in I–V curve of heterojunction resonant tunneling diodes simulated by a self-consistent quantum method
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1. Demonstration of Intrinsic Tristability in Double-Barrier Resonant Tunneling Diodes With the Wigner Transport Equation;IEEE Transactions on Electron Devices;2010-12
2. Transition between N- and Z-shaped current-voltage characteristics in semiconductor multiple-quantum-well structures;Journal of Applied Physics;2006-08
3. The role of emitter quasi-bound state and scattering on intrinsic bistability in resonant tunneling diodes;Physica E: Low-dimensional Systems and Nanostructures;2004-05
4. Charge accumulation over a region of electrical multistability in a double barrier structure;Surface Science;1996-07
5. Magnetoplasmon emission versus Landau-level scattering in resonant tunneling through double-barrier structures;Physical Review B;1995-11-15
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