Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions-Reference-Cited by-同舟云学术

Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Published:2021-01-25 Issue:4 Volume:118 Page:042411
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Scheike Thomas¹^ORCID,Xiang Qingyi¹^ORCID,Wen Zhenchao¹^ORCID,Sukegawa Hiroaki¹^ORCID,Ohkubo Tadakatsu¹^ORCID,Hono Kazuhiro¹^ORCID,Mitani Seiji¹^ORCID

Affiliation:

1. National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan

Funder

ImPACT Program of the Council for Science, Technology and innovation

TIA collaborative research program “Kakehashi”

Japan Society for the Promotion of Science

NEDO

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0037972

Reference43 articles.

1. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

2. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

3. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

4. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

5. 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

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