Nb–Nb direct bonding at room temperature for superconducting interconnects

Abstract

Superconducting devices with high-density integration are required for applications, such as high-performance detectors and quantum computing. Here, the direct bonding of Nb electrodes at room temperature using a surface activated bonding method was investigated. We directly bonded Nb bonding pads and then performed current–voltage measurements in a 3He cryostat. A superconducting current of 1–5 mA was confirmed for the bonded interconnect. The transition temperature was 7.3–9.3 K. These values are affected by the quality of the bonding interface. According to cross-sectional transmission electron microscopy observations and energy-dispersive x-ray spectroscopy analysis of the bonding interface, the Nb layers were bonded with a 3-nm-thick intermediate layer made of Si and Nb between them. The Si sources were the bonding substrate and the bonding jig in the bonding apparatus.