Depth-resolved measurement of the Meissner screening profile in a niobium thin film from spin-lattice relaxation of the implanted β-emitter 8Li

Abstract

We report measurements of the Meissner screening profile in a Nb(300 nm)/Al2O3 thin film using 8Liβ-detected nuclear magnetic resonance (β-NMR). The NMR probe 8Li was ion-implanted into the Nb film at energies ≤ 20 keV, corresponding to mean stopping depths comparable to Nb’s magnetic penetration depth λ. 8Li’s strong dipole–dipole coupling with the host 93Nb nuclei provided a “cross-relaxation” channel that dominated in low magnetic fields, which conferred indirect sensitivity to the local magnetic field via the spin-lattice relaxation (SLR) rate 1/T1. From a fit of the 1/T1 data to a model accounting for its dependence on temperature, magnetic field, and 8Li+ implantation energy, we obtained a magnetic penetration depth λ0= 51.5(22) nm, consistent with a relatively short carrier mean-free-path ℓ= 18.7(29) nm typical of similarly prepared Nb films. The results presented here constitute an important step toward using 8Liβ-NMR to characterize bulk Nb samples with engineered surfaces, which are often used in the fabrication of particle accelerators.